English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

The valence band edge in tiny angle twist bilayers of MoS$_2$ and phosphoreneis shown to consist of highly localized energy levels created by a `moir\'equantum well', i.e. trapped by the interlayer moir\'e potential. Theseapproximately uniformly spaced energy levels exhibit a richly modulated chargedensity, becoming ultra-localized at the valence band maximum. The number andspacing of such levels is controllable by the twist angle and interlayerinteraction strength, suggesting the possibility of `moir\'e engineering'ordered arrays of quantum dots in 2d twist semi-conductors.

Moir\'e quantum well states in tiny angle two dimensional semi-conductors