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Because of its ultrawide bandgap, high breakdown electric field, and largearea affordable substrates grown from the melt, beta Ga2O3 has attracted greatattention recently for potential applications of power electronics. However,its thermal conductivity is significantly lower than those of other widebandgap semiconductors, such as AlN, SiC, GaN, and diamond. To ensure reliableoperation with minimal selfheating at high power, proper thermal management iseven more essential for Ga2O3 devices. Similarly to the past approaches aimingto alleviate selfheating in GaN HEMTs, a possible solution has been tointegrate thin Ga2O3 membranes with diamond to fabricate Ga2O3 on diamondlateral MESFET or MOSFET devices by taking advantage of the ultra high thermalconductivity of diamond. Even though the TBC between wide bandgap semiconductordevices such as GaN HEMTs and a diamond substrate is of primary importance forheat dissipation in these devices, fundamental understanding of the Ga2O3diamond thermal interface is still missing. In this work, we study the thermaltransport across the interfaces of Ga2O3 exfoliated onto a single crystaldiamond. The Van der Waals bonded Ga2O3 diamond TBC is measured to be 17MWm2K1, which is comparable to the TBC of several physical vapor depositedmetals on diamond. A Landauer approach is used to help understand phonontransport across perfect Ga2O3 diamond interface, which in turn sheds light onthe possible TBC one could achieve with an optimized interface. A reducedthermal conductivity of the Ga2O3 nanomembrane is also observed due toadditional phonon membrane boundary scattering. The impact of theGa2O3substrate TBC and substrate thermal conductivity on the thermalperformance of a power device are modeled and discussed.

Thermal Conductance across beta-Ga2O3-diamond Van der Waals Heterogeneous Interfaces