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Hexagonal boron nitride (h-BN) is a 2D, wide band-gap semiconductor that hasrecently been shown to display bright room-temperature emission in the visibleregion, sparking immense interest in the material for use in quantumapplications. In this work, we study highly crystalline, single atomic layersof chemical vapour deposition (CVD)-grown hexagonal boron nitride and findpredominantly one type of emissive state. Using a multidimensionalsuper-resolution fluorescence microscopy technique we simultaneously measurespatial position, intensity and spectral properties of the emitters, as theyare exposed to continuous wave illumination over minutes. As well as lowemitter heterogeneity, we observe inhomogeneous broadening of emitterline-widths and power law dependency in fluorescence intermittency, this is instriking similarity to previous work on quantum dots. These results show thathigh control over h-BN growth and treatment can produce a narrow distributionof emitter type, and that surface interactions heavily influence thephotodynamics. Furthermore, we highlight the utility of spectrally-resolvedwide-field microscopy in the study of optically-active excitons in atomicallythin two-dimensional materials.

Spectrally-Resolved Photodynamics of Individual Emitters in Large-Area Monolayers of Hexagonal-Boron Nitride