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Unlike Si, 2-dimensional (2D) Transition Metal Dichalcogenides (TMDs) offeratomically thin channels for carrier transport in FETs. Despite advantages likesuperior gate control, steep sub-threshold swing and high carrier mobilityoffered by 2D FET channels, process related challenges like lack of selectivedoping techniques like implantation and CMOS compatible process for fabricationof 2D TMD based FETs hinder the anticipated viability of 2D semiconductortechnology for future electronic applications. In this letter, we demonstrate aprocess oriented approach to realize superior ambipolarity in 2D FETs based onTMDs like Molybdenum disulfide (MoS2), Tungsten disulfide (WS2), Molybdenumdiselenide (MoSe2) and Tungsten diselenide (WSe2) by enhancing hole current bymultiple orders of magnitude in otherwise strong N-type transistors. The methodinvolves Hydrogen Sulfide (H2S gas) assisted contact engineering of N-type FETsto introduce surface states that alter device behavior. Based on materialcharacterization and bandstructure calculations, physical insights have beendeveloped to understand the effect of such a contact engineering technique.Subsequently, this technique has been demonstrated to alter device behavior byenhancing hole conduction in originally N-type exfoliated (MoS2, WS2, MoSe2 andWSe2) and CVD grown (MoS2) TMD samples to confirm its potential towardsenabling the feasibility of 2D semiconductor device technology.

H2S assisted contact engineering: a universal approach to enhance hole  conduction in all TMD Field-Effect Transistors and achieve ambipolar CVD MoS2  Transistors