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One of the major roadblocks for the establishment of 2D semiconductortechnology for CMOS integrated circuits is lack of industry scalable dopingtechniques that lead to 2D FETs with comparable n-type and p-type behavior.Here we demonstrate a Chalcogen based technique to alter the surface of WSe2 torealize enhanced ambipolar behavior along with a complete transition from n top-type behavior of WSe2 FETs. The technique involves dry chemistry betweenChalcogen atom and TMDC surface which leads to surface states that causeimproved hole and electron injection through the FETs. We propose such atechnique for realization of all WSe2 based CMOS integrated circuits andtherefore unveil its potential towards technology.

Chalcogen assisted contact engineering: towards CMOS integration of Tungsten Diselenide Field Effect Transistors