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This paper reports a few-layer black phosphorus thickness pattern fabricatedby a top-down nanofabrication approach. This was achieved by a new wet etchingprocess that can etch selected regions of few-layer black phosphorus with anatomic layer accuracy. This method is deep-UV and e-beam lithography processcompatible,and is free of oxygen and other common doping sources. It provides afeasible patterning approach for largescale manufacturing of few-layer BPmaterials and devices.

A wet etching method for few-layer black phosphorus with an atomic accuracy and compatibility with major lithography techniques