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Three Dimensional Integrated Circuits (3D IC) offer lower power consumption,higher performance, higher bandwidth, and scalability over the conventional twodimensional ICs. Through-Silicon Via (TSV) is one of the fabrication mechanismsthat connects stacked dies to each other. The large size of TSVs and theproximity between them lead to undesirable coupling capacitance. Thisinterference causes mutual influences between adjacent TSVs and producescrosstalk noise. Furthermore, this effect threats the reliability of dataduring traversal between layers. This paper proposes a mechanism thatefficiently reduces crosstalk noise between TSVs with lower area overhead ascompared to previous works. This mechanism revolves around the fact thatretaining TSV value in current state can reduce coupling in some cases. Toevaluate the mechanism, gem5 simulator is used for data extraction and severalbenchmarks are taken from the SPEC2006 suite. The simulation results show thatthe proposed mechanism reduces crosstalk noise with only 30% imposed TSVoverhead while delay decreased up to 25.7% as compared to a recent relatedwork.

3DCAM: A Low Overhead Crosstalk Avoidance Mechanism for TSV-Based 3D ICs