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A thin oxide layer protects metals from electrochemical corrosion and hencethe stability of this oxide layer is crucial for corrosion resistance ofmetals. The dynamics of cationic and anionic point defects which are injectedinto this oxide layer at the metal-oxide-layer interface and theoxide-layer-environment interface during electrochemical processes determinethe stability of this oxide-layer.  The point defect model originally advanced by Digby Macdonald and perfectedinto a correct and complete theory by Bosco Emmanuel provides a concrete basisfor investigating this stability question. We have formulated a system of 3coupled differential equations (2 PDEs and one ODE) with appropriate initialand boundary conditions that include the defect injection reactions. Thissystem of equations recognize the diffusion, migration and clustering of thepoint defects in the oxide-layer. The defect clustering is modelled using theAvrami Theorem and the area-volume laws for random agglomerates.  This research is expected to provide insights into the criticality associatedwith the oxide-layer breakdown and the periodic, aperiodic and chaoticoscillations in the electrical current / potential which signal the breakdownof the passive oxide-layer. A large body of experimental data is waiting to beunderstood within a frame-work such as the present. Some initial results fromthe model are also reported.

Diffusion- Migration-Reaction-Limited Aggregation of Point Defects: A Model for the Stability of Oxide-layers on Metals and Its Breakdown