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Dielectric capacitors hold a tremendous advantage for energy storage due totheir fast charge/discharge times and stability in comparison to batteries andsupercapacitors. A key limitation to today's dielectric capacitors, however, isthe low storage capacity of conventional dielectric materials. To mitigate thisissue, antiferroelectric materials have been proposed, but relatively fewfamilies of antiferroelectric materials have been identified to date. Here, wepropose a new design strategy for the construction of lead-freeantiferroelectric materials using interfacial electrostatic engineering. Webegin with a ferroelectric material with one of the highest known bulkpolarizations, BiFeO3. We show that by confining atomically-precise thin layersof BiFeO3 in a dielectric matrix that we can induce a metastableantiferroelectric structure. Application of an electric field reversiblyswitches between this new phase and a ferroelectric state, in addition, tuningof the dielectric layer causes coexistence of the ferroelectric andantiferroelectric states. Precise engineering of the structure generates anantiferroelectric phase with energy storage comparable to that of the bestlead-based materials. The use of electrostatic confinement provides a newpathway for the design of engineered antiferroelectric materials with large andpotentially coupled responses.

A high-energy density antiferroelectric made by interfacial electrostatic engineering