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The reversible phase transition between orthorhombic and cubic phases isdemonstrated in all-inorganic perovskite CsPbIBr2 grown by a dual-sourcevapor-deposition method. The phase transition is actuated via heating andmoisture exposure. The different crystal structures of two phases result indistinct optoelectronic properties including optical absorption, refractiveindex, and carrier transport. The perovskite photodetector array for thenon-volatile rewritable optical memory application is further investigated. Anear-infrared (NIR) laser ({\lambda} = 1064 nm) is used to selectively heatphotodetector pixels through the photothermal effect of the interfacial Agelectrodes, resulting in an optically absorbing perovskite phase for thephotodetectors. The locations of specific laser-written pixels can be read outby measuring their photocurrents, and the stored optical information can alsobe erased by moisture exposure. Finally, a proof-of-concept optical imagingapplication has been demonstrated using perovskite photodetector arraysfabricated on flexible PET substrates. These results show promisingapplications of vapor-deposited inorganic perovskite for optical memory andimage sensors, with unique potential for low-cost manufacturing of large-areaand/or flexible devices.

Laser-induced Phase-change Perovskite Photodetector Arrays for Optical Information Storage and Imaging