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A route to break molecular nitrogen (N2) under mild conditions isdemonstrated by N2 gas cracking on, and incorporation into, lanthanide films.Successful growth of lanthanide nitride thin films, made by evaporation oflanthanides in a partial N2 atmosphere at room temperature and pressure as lowas 10-4 Torr, is confirmed using X-ray diffraction. In-situ conductancemeasurements of pure lanthanide thin films exposed to N2 gas show an immediatesurface reaction and a slower bulk reaction. Finally, we report partialreversal of the nitrogen incorporation in a lanthanide nitride by cyclingvacuum and nitrogen conditions in the sample chamber.A route to break molecularnitrogen (N2) under mild conditions is demonstrated by N2 gas cracking on, andincorporation into, lanthanide films. Successful growth of lanthanide nitridethin films, made by evaporation of lanthanides in a partial N2 atmosphere atroom temperature and pressure as low as 10-4 Torr, is confirmed using X-raydiffraction. Insitu conductance measurements of pure lanthanide thin filmsexposed to N2 gas show an immediate surface reaction and a slower bulkreaction. Finally, we report partial reversal of the nitrogen incorporation ina lanthanide nitride by cycling vacuum and nitrogen conditions in the samplechamber.

Breaking molecular nitrogen under mild conditions with an atomically clean lanthanide surface