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Intrinsic hydrogenated amorphous silicon films can provide outstandingsurface passivation of crystalline silicon wafer surfaces. This quality ofIntrinsic hydrogenated amorphous silicon makes it valuable in heterojunctionwith intrinsic thin layer (HIT) solar cell fabrication. This paper describesthe material characteristics and electronic properties of Intrinsichydrogenated amorphous silicon that affects its passivation quality. A study ofpassivation quality of intrinsic hydrogenated amorphous silicon layer has beendone with respect to deposition parameters in Plasma Enhanced Chemical VaporDeposition (PECVD), the most commonly used method of its deposition. It wasfound that very good surface passivation with surface recombination velocity <50 cm/s can be obtained from thickness of 30 nm of Intrinsic hydrogenatedamorphous silicon (a-Si:H(i)), which is better than most other passivationtechniques. A mathematical model based on Artificial Neural Network (ANN) isdesigned to predict the carrier lifetime for a given deposition condition andit is shown that the prediction capability of developed ANN model varies withthe number of neurons in the hidden layer using Akaike Information Criterion(AIC), which is a widely accepted model selection method for measuring thevalidity of nonlinear models.

Optimization and Neural Network-Based Modelling of Surface Passivation Effectiveness by Hydrogenated Amorphous Silicon for Solar Cell Applications