English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Tools annual

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Presents the access of premium content as premium feature

Premium Content

Global: Zendy Plus annual

Global: Zendy Free Plan

We propose and numerically analyze the hybridSi-Ge\textsubscript{2}Sb\textsubscript{2}Te\textsubscript{5} strip waveguideswitches for Mid-IR wavelength of 2.1 $\mu$m. The switches investigated are oneinput-one output (on-off) type and one input-two outputs (directional coupler)type. The reversible transition between the switch states is achieved byinducing the phase transition from crystalline to amorphous and vice-versa byapplication of voltage pulses. The approach of embedding the nanoscale activematerial Ge\textsubscript{2}Sb\textsubscript{2}Te\textsubscript{5} within theSi waveguide is taken to enhance the interaction of light with the activeregion of the switches. The dimensions of the active regions of the switchesare optimized to achieve low insertion loss, low switching energy, and highextinction ratio. In case of one input-one output switch, an extinction ratioof 33.79 dB along with an extremely low insertion loss of 0.52 dB is achievedusing optimum Ge\textsubscript{2}Sb\textsubscript{2}Te\textsubscript{5} lengthof only 0.92 $\mu$m. For one input-two outputs switch, an extinction ratio of10.33 dB and 5.23 dB is obtained in cross and bar state respectively using anactive length of 52 $\mu$m. These values of extinction ratio, which areotherwise 18.59 dB and 8.33 dB respectively, are due to the necessity of dopingthe Si beneath the Ge\textsubscript{2}Sb\textsubscript{2}Te\textsubscript{5} tofacilitate the electrical conduction needed for Joule heating. A suitable gapof 100 nm is kept between the active and passive arm of the directional couplerswitch. The electro-thermal co-simulations confirm that phase change occurs inwhole of the Ge\textsubscript{2}Sb\textsubscript{2}Te\textsubscript{5} regionin both types of switches.

Mid-IR non-volatile silicon photonic switches using nanoscale Ge\textsubscript{2}Sb\textsubscript{2}Te\textsubscript{5} embedded in SOI waveguide