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At the Faraday Discussion, in the paper titled `Neuromorphic computation withspiking memristors: habituation, experimental instantiation of logic gates anda novel sequence-sensitive perceptron model' it was demonstrated that a largeamount of computation could be done in a sequential way using memristor currentspikes (d.c. response). As these spikes are found in many memristors (possiblyall), this novel approach could be highly useful for fast and reproduciblememristor circuits. However, questions were raised as to whether these spikeswere actually due to memristance or merely capacitance in the circuit. In thislonger version of the Faraday Discussion response, as much information as isavailable from both published and unpublished data from my lab is marshalledtogether. We find that the devices are likely imperfect memristors with somecapacitance, and that the spikes are related to the frequency effect seen inmemristor hysteresis curves, thus are an integral part of memristance.

My, and others', spiking memristors are true memristors: a response to  R.S. Williams' question at the New Memory Paradigms: Memristive Phenomena and  Neuromorphic Applications Faraday Discussion