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Several pn junctions were constructed from mechanically exfoliated ultrawidebandgap (UWBG) beta-phase gallium oxide (\b{eta}-Ga2O3) and p-type galliumnitride (GaN). The mechanical exfoliation process, which is described indetail, is similar to that of graphene and other 2D materials. Atomic forcemicroscopy (AFM) scans of the exfoliated \b{eta}-Ga2O3 flakes show very smoothsurfaces with average roughness of 0.647 nm and transmission electronmicroscopy (TEM) scans reveal flat, clean interfaces between the \b{eta}-Ga2O3flakes and p-GaN. The device showed a rectification ratio around 541.3(V+5/V-5). Diode performance improved over the temperature range of 25{\deg}Cand 200{\deg}C, leading to an unintentional donor activation energy of 135 meV.As the thickness of exfoliated \b{eta}-Ga2O3 increases, ideality factorsdecrease as do the diode turn on voltages, tending toward an ideal thresholdvoltage of 3.2 V as determined by simulation. This investigation can helpincrease study of novel devices between mechanically exfoliated \b{eta}-Ga2O3and other materials.

A Novel PN junction between Mechanically Exfoliated \b{eta}-Ga2O3 and p-GaN