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The temperature dependence of the Seebeck coefficient of homoepitaxial metalorganic vapor phase (MOVPE) grown, silicon doped $\beta$-Ga$_2$O$_3$ thin filmswas measured relative to aluminum. For room temperature we found the relativeSeebeck coefficient of$S_{\beta\text{-Ga}_2\text{O}_3\text{-Al}}=(-300\pm20)\;\mu$V/K. At high bathtemperatures $T>240$ K, the scattering is determined byelectron-phonon-interaction. At lower bath temperatures between $T=100$ K and$T=300$ K, an increase in the magnitude of the Seebeck coefficient is explainedin the frame of Strattons formula. The influence of the different scatteringmechanisms on the magnitude of the Seebeck coefficient is discussed andcompared with Hall measurement results.

Temperature dependence of the Seebeck coefficient of epitaxial $\beta$-Ga$_2$O$_3$ thin films