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It is well established that nearly all high-quality (Q) Fano-like resonancesin terahertz (THz) metasurfaces broaden as asymmetry increases, resulting in adecline of Q-factor and an increase in the resonance intensity. Therefore, inorder to determine the optimal design for applications in THz sensing, a Figureof Merit (FoM) is required. Previous studies have identified the asymmetryregimes at which the peak FoM occurs for various, specific unit cellgeometries. However to date, there is no systematic comparison of the resultingFoMs for common and novel geometries. Here, a THz planar metafilm featuringsplit ring resonators with four distributed capacitive gaps is investigated tocompare three unique methods of implementing asymmetry: (1) adjacent L-brackettranslation, (2) capacitive gap translation and (3) increasing gap width. Theresults obtained find that by translating two gaps and increasing the bottomgap width of the unit cell, the high-Q Fano-like resonances are $6 \times$higher than the FoM for the fundamental dipole mode. This work further informsthe design process for THz metasurfaces and as such will help to define theirapplications in photonics and sensing.

Influence of symmetry breaking on Fano-like resonances in high Figure of Merit planar terahertz metafilms