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Previous cryogenic electronics studies are most above 4.2K. In this paper wepresent the cryogenic characterization of a 0.18{\mu}m standard bulk CMOStechnology(1.8V and 5V) at sub-kelvin temperature around 270mK. PMOS and NMOSdevices with different width to length ratios(W/L) are tested and characterizedunder various bias conditions at temperatures from 300K to 270mK. It is shownthat the 0.18{\mu}m standard bulk CMOS technology is still working atsub-kelvin temperature. The kink effect and current overshoot phenomenon areobserved at sub-kelvin temperature. Especially, current overshoot phenomenon inPMOS devices at sub-kelvin temperature is shown for the first time. Thetransfer characteristics of large and thin-oxide devices at sub-kelvintemperature are modeled using the simplified EKV model. This work facilitatesthe CMOS circuits design and the integration of CMOS circuits withsilicon-based quantum chips at extremely low temperatures.

Characterization and Modeling of 0.18{\mu}m CMOS Technology at sub-Kelvin Temperature