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Two-dimensional layered semiconductors have recently emerged as attractivebuilding blocks for next-generation low-power non-volatile memories. However,challenges remain in the controllable sub-micron fabrication of bipolarresistively switching circuit components from these novel materials. Here wereport on the scalable experimental realisation of lateral on-dielectricmemtransistors from monolayer single-crystal molybdenum disulfide (MoS2)utilising a focused helium ion beam. Site-specific irradiation with the probeof a helium ion microscope (HIM) allows for the creation of charged defects inthe MoS2 lattice. The reversible drift of these locally seeded defects in theapplied electric field modulates the resistance of the semiconducting channel,enabling versatile memristive functionality on the nanoscale. We find thedevice can reliably retain its resistance ratios and set biases for hundreds ofswitching cycles at sweep frequencies of up to 2.9 V/s with relatively lowdrain-source biases. We also demonstrate long-term potentiation and depressionwith sharp habituation that promises application in future neuromorphicarchitectures. This work advances the down-scaling progress of memristivedevices without sacrificing key performance parameters such as powerconsumption or its applicability for synaptic emulation.

Neuromorphic MoS2 memtransistors fabricated by localised helium ion beam irradiation