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Two-dimensional MoS2 is a crystalline semiconductor with high potential fornumerous technologies. Research in recent years has sought to exploit thedirect band gap and high carrier mobility properties of monolayer MoS2 forfunctional applications. To date, the production of MoS2 has remained at theresearch level and samples are usually synthesized in small quantities usingsmall yield, expensive techniques. In order to realize scalable MoS2-basedtechnology, large-area, high-quality and affordable MoS2 wafers must becomeavailable. Here we report on MoS2 films grown on 100 mm sapphire wafers by achemical vapor deposition process utilizing hydrogen sulfide and molybdenumprecursor mixtures consisting of Na2MoO4 and NaCl. The grains of these filmsare faceted, large-area, on the order of 1-75 microns in length on edge. Growthconditions are identified that yield monolayer MoS2 films. Raman spectroscopyshows an E2g and A1g peak separation of 17.9-19.1 cm-1. Photoluminescencespectroscopy shows that annealing the films post-growth suppresses trionemission. X-ray photoelectron spectroscopy of the annealed films shows an inincrease in the S:Mo concentration ratio from 1.90:1.00 to 2.09:1.00.

High-quality, large-grain MoS2 films grown on 100 mm sapphire substrates using a novel molybdenum precursor