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Searching of optimal parameters of nanoelectronic devices is a primal problemin their modeling. We solve this problem on example of the electron ballisticswitch in quantum network model. For this purpose, we use a computing scheme inwhich closed channels are taking into account. It allows calculating correctlya scattering matrix of the switch and, consequently, the electric currentsflowing through it. Without losing generality, we consider model oftwo-junction switch at room temperature. Its character is localization of thecontrolling electric field in the domain before branching. We optimize switchparameters using a genetic algorithm. At the expense of it for InP, GaAs andGaSb switch efficiency reached 77-78%. It is established that, for theconsidered materials, volt-ampere characteristics of the device are close tothe linear ones at bias voltages 0-50 mV. It allowed describing with a goodaccuracy electron transport in the switch by means of $3\times 3$ matrix ofapproximate conductivity. Finally, based on the performed parametersoptimization of two-junction switch we formulate the general scheme of modelingnanoelectronic devices in the framework of quantum network formalism.

Two-junction ballistic switch in quantum network model