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We report on the systematic investigation of the optical properties of aselectively grown quantum dot gain material assisted by block-copolymerlithography for potential applications in active optical devices operating inthe wavelength range around 1.55 um and above. We investigated a new type ofdiblock copolymer PS-b-PDMS (polystyrene-block-polydimethylsiloxane) for thefabrication of silicon oxycarbide hard mask for selective area epitaxy ofInAs/InP quantum dots. An array of InAs/InP quantum dots was selectively grownvia droplet epitaxy. Our detailed investigation of the quantum dot carrierdynamics in the 10-300 K temperature range indicates the presence of a densityof states located within the InP bandgap in the vicinity of quantum dots. Thosedefects have a substantial impact on the optical properties of quantum dots.

Synthesis and systematic optical investigation of selective area droplet epitaxy of InAs/InP quantum dots assisted by block copolymer lithography