English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Tools annual

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Presents the access of premium content as premium feature

Premium Content

Global: Zendy Plus annual

Global: Zendy Free Plan

Metal-semiconductor interfaces, known as Schottky junctions, have long beenhindered by defects and impurities. Such imperfections dominate the electricalcharacteristics of the junction by pinning the metal Fermi energy. We reportmeasurements on a boron nitride encapsulated graphene-tungsten diselenide(WSe$_2$) Schottky junction which exhibits ideal diode characteristics and acomplete lack of Fermi-level pinning. The Schottky barrier height of the deviceis rigidly tuned by electrostatic gating of the WSe$_2$, enabling experimentalverification of the Schottky-Mott limit in a single device. Utilizing thisexceptional gate control, we realize a super-ideal gated-Schottky diode whichsurpasses the ideal diode limit. Our results provide a pathway for defect-freeelectrical contact to two-dimensional semiconductors and open up possibilitiesfor circuits with efficient switching characteristics and higher efficiencyoptoelectronic devices.

Super-ideal diodes at the Schottky-Mott limit in gated graphene-WSe$_2$ heterojunctions