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We report on the fabrication of conducting interfaces between LaAlO$_3$ andSrTiO$_3$ by 90$^o$ off-axis sputtering in an Ar atmosphere. At a growthpressure of 0.04 mbar the interface is metallic, with a carrier density of theorder of $10^{13}$ cm$^{-2}$ at 3 K. By increasing the growth pressure, weobserve an increase of the out-of-plane lattice constants of the LaAlO$_3$films while the in-plane lattice constants do not change. Also, thelow-temperature sheet resistance increases with increasing growth pressure,leading to an insulating interface when the growth pressure reaches 0.10 mbar.We attribute the structural variations to an increase of the La/Al ratio, whichalso explains the transition from metallic behavior to insulating behavior ofthe interfaces. Our research emphasizes the key role of the cationstoichiometry of LaAlO$_3$ in the formation of the conducting interface, andalso the control which is furnished by the Ar pressure in the growth process.

Influence of stoichiometry on interfacial conductance in LaAlO$_3$/SrTiO$_3$ grown by 90$^o$ off-axis sputtering