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Layered two-dimensional (2D) materials provide a wide range of uniqueproperties as compared to their bulk counterpart, making them ideal forheterogeneous integration for on-chip interconnects. Hence, a detailedunderstanding of the loss and index change on Si integrated platform is aprerequisite for advances in opto-electronic devices impacting opticalcommunication technology, signal processing, and possibly photonic-basedcomputing. Here, we present an experimental guide to characterize transitionmetal dichalcogenides (TMDs), once monolithically integrated into the Siliconphotonic platform at 1.55 um wavelength. We describe the passive tunablecoupling effect of the resonator in terms of loss induced as a function of 2Dmaterial layer coverage length and thickness. Further, we demonstrate aTMD-ring based hybrid platform as a refractive index sensor where resonanceshift has been mapped out as a function of flakes thickness which correlateswell with our simulated data. These experimental findings on passive TMD-Sihybrid platform open up a new dimension by controlling the effective change inloss and index, which may lead to the potential application of 2D materialbased active on chip photonics.

Loss and Coupling Tuning via Heterogeneous Integration of MoS2 Layers in Silicon Photonics