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Copper nanowires are widely used as on-chip interconnects due to superiorconductivity. However, with aggressive Cu interconnect scaling, the diffusivesurface scattering of electrons drastically increases the electricalresistivity. In this work, we studied the electrical performance of Cu thinfilms on different materials. By comparing the thickness dependence of Cu filmsresistivity on MoS2 and SiO2, we demonstrated that two-dimensional MoS2 can beused to enhance the electrical performance of ultrathin Cu films due to apartial specular surface scattering. By fitting the experimental data with thetheoretical Fuchs Sondheimer model, we obtained the specularity parameter atthe Cu MoS2 interface in the temperature range 2K to 300K. Furthermore, firstprinciple calculations based on the density functional theory indicates thatthere are more localized states at the Cu amorphous SiO2 interface than the CuMoS2 interface which is responsible for the higher resistivity in the Cu SiO2heterostructure due to more severe electron scattering. Our results suggestthat Cu MoS2 hybrid is a promising candidate structure for the futuregenerations of CMOS interconnects.

Studies of two-dimensional MoS2 on enhancing the electrical performance of ultrathin copper films