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We have decomposed the modeling of the field-effect transistors into the twoindependent parts: the current continuity based kinetics and the chargeneutrality based electrostatics. The former part, that is universal for allFETs, leads to an explicit and closed form of I-V characteristics as a functionof the total channel charge. The latter part, which is specific for aparticular material and geometric configurations can be considered as anindependent engineering task. The quantum capacitance and the interface trapdensity are consistently incorporated into the solution of the currentcontinuity equation in the diffusion-drift approximation, providing a completeconsistency in the current and the capacitance small-signal characteristics.

The Core Diffusion-Drift Field-Effect Transistor Theory Including Quantum and Interface Trap Capacitances