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Using time-dependent density-functional theory, we investigate the electronicstopping power of self-irradiated silicon through non-adiabatic dynamicssimulations. For specific velocities above 0.6 atom units, electronic stoppingshows a generally assumed metallic behavior that is velocity-scaling. While inthe lower velocity regime, the slope of electronic stopping power versusvelocity changes and the overall magnitude are significantly greater thanexpectations, leading to a complete vanish of hard threshold. An analysis ofthe electron localization function allows us to arrive at the followingconclusion: the long duration of encounter process between the host atoms andthe projectiles with low velocities makes possible the formation of chemicalbonds with relative high bond order. The continuous formation and breaking ofchemical bonds provides an additional effective energy loss channel.

Nonlinear Electronic Stopping for Slow Ion in a Narrow Band Gap Semiconductor: Formation of Chemical Bonds during Collision