English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Passivation of surface reactive ZnO(0001)-Zn terminated surface is carriedout by in-situ deposition of indium metal and post deposition annealing at hightemperature (600 C - 1000 C). After the every cycle of indium deposition andannealing the ZnO(0001) surface is characterised by synchrotron radiation basedphotoemission. The photoemission studies confirmed the formation of depositedindium turned into indium oxide (In2O3 and In2Ox) as surface passivation layer.The core level spectra for Zn, C, O, were acquired at different photon energyfor high surface sensitivity. Overall core level peaks (Zn 3p, In 4d, O 1s)having average binding shift ranging from 0.5 eV to 0.8 eV. The valance bandspectra shows fermi level shift of 0.9 eV after passivation at 1000 C and workfunction raises form 4.06 eV to 4.77 eV. Downward band bending of ZnO(0001)surface is turned into upward bending of 0.98 eV by indium oxide passivation athigh temperature, which is suitable for making ZnO schotty contact and devices.

Synchrotron radiation based photoemission studies of indium oxide passivation of ZnO(0001) surface at high temperature