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Recent experiments and continuum modeling work on dopant diffusion andsegregation, Si-Ge interdiffusion, and defect engineering in SiGe materialsystems are reviewed. Doping impact on Ge thin film quality and interdiffusionis also discussed. These are relevant to SiGe-based semiconductor devicesincluding SiGe hetero-junction bipolar transistors, metal-oxidesemiconductorfield-effect transistors, and Ge-on-Si based photonic devices.

Experiments and Modeling of Mass Transport Phenomena in SiGe Devices