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Recent experiment reports that high thermal conductivity of ~1000 W/mK isobserved in cubic boron arsenide crystal (BAs). In order to expand the scope offuture applications, we use first-principles calculations to investigate thephonon-limited electronic transport in BAs family and modulation effect ofpressure. In the case of electron doping, BAs, AlAs and AlSb exhibit thecoupling between high frequency optical phonons and electron as well as the lowfrequency acoustical phonons in BSb. And BAs has the weakest electron-phononcoupling thus has a high N-type carrier mobility of 1740 cm^2/Vs. After theintroduction of pressure, phonon spectra has more obvious change than theelectronic structure. The phonon hardening under the pressure gives rise to theweakening of electron-phonon coupling. It is obtained that the pressure of 50GPa can improve the mobility of BAs up to 4300 cm^2/Vs, which is much high andgreat significance to the current semiconductor industry.

High phonon-limited mobility of BAs under pressure