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Electro-optic modulators transform electronic signals into the optical domainand are critical components in modern telecommunication networks, RF photonics,and emerging applications in quantum photonics and beam steering. All theseapplications require integrated and voltage-efficient modulator solutions withcompact formfactors that are seamlessly integratable with Silicon photonicsplatforms and feature near-CMOS material processing synergies. However,existing integrated modulators are challenged to meet these requirements.Conversely, emerging electro-optic materials heterogeneously integrated with Siphotonics open a new avenue for device engineering. Indium tin oxide (ITO) isone such compelling material for heterogeneous integration in Si exhibitingformidable electro-optic effect characterized by unity order index attelecommunication frequencies. Here we overcome these limitations anddemonstrate a monolithically integrated ITO electro- optic modulator based on aMach Zehnder interferometer (MZI) featuring a high-performance half-wavevoltage and active device length product, VpL = 0.52 V-mm. We show, how thatthe unity-strong index change enables a 30 micrometer-short pi-phase shifteroperating ITO in the index-dominated region away from the epsilon-bear-zero ENZpoint. This device experimentally confirms electrical phase shifting in ITOenabling its use in multifaceted applications including dense on-chipcommunication networks, nonlinearity for activation functions in photonicneural networks, and phased array applications for LiDAR.

0.52 V-mm ITO-based Mach-Zehnder Modulator in Silicon Photonics