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Diamond, a wide band-gap semiconductor, can be engineered to exhibitsuperconductivity when doped heavily with boron. The phenomena has beendemonstrated in samples grown by chemical vapour deposition where the boronconcentration exceeds the critical concentration for the metal-to-insulatortransition of $n_{MIT} \gtrsim 4\times10^{20}/\text{cm}^3$. While the thresholdcarrier concentration for superconductivity is generally well established inthe literature, it is unclear how well correlated higher critical temperaturesare with increased boron concentration. Previous studies have generallycompared several samples grown under different plasma conditions, or onsubstrates having different crystallographic orientations, in order to vary theincorporation of boron into the lattice. Here, we present a study of a singlesample with unchanging boron concentration, and instead modify the chargecarrier concentration by introducing compensating defects via high energy ionirradiation. Superconductivity is completely suppressed when the number ofdefects is sufficient to compensate the hole concentration to below threshold.Furthermore, we show it is possible to recover the superconductivity byannealing the sample in vacuum to remove the compensating defects.

Irradiation induced modification of the superconducting properties of heavily boron doped diamond