English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

We report the decisive role of reactive ion impurities in low energy Ar+ ionbeam on surface nanopattern formation. The source of experimental inconsistencyin pattern formation by low energy (few keV to 10's of KeV) Ar+ ion beam hasbeen identified by irradiating Si surface at an oblique angle with pure andimpure Ar+ ion beam of energy 3-10 keV. No well-defined patterns are observedfor mass selected pure Ar+ ion bombardment, whereas well defined periodicripple pattern is formed by the same experimental condition with impure massunanalyzed Ar+ ion irradiation. The contaminants in mass unanalyzed beamspecifically reactive nitrogen, oxygen and carbon play the main role of patternformation by introducing chemical instability on the Si surface. The surfacemorphology of the irradiated Si surfaces is examined by Atomic Force Microscopy(AFM). The surface contamination and corresponding chemical compound formationare investigated by X-ray photoelectron spectroscopy (XPS).

Impurity in low energy Ar+ ion beam is the cause of pattern formation on Si