English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Low-temperature epitaxial growth of refractory transition-metal nitride thinfilms by means of physical vapor deposition has been a recurring theme inadvanced thin-film technology for several years. In the present study,150-nm-thick epitaxial HfN layers are grown on MgO(001) by reactivehigh-impulse magnetron sputtering (HiPIMS) with no external substrate heating.Maximum film growth temperatures Ts due to plasma heating range from 70-150{\deg}C, corresponding to Ts/Tm = 0.10-0.12 (in which Tm is the HfN meltingpoint in K). During HiPIMS, gas and sputtered-metal ion fluxes incident at thegrowing film surface are separated in time due to strong gas rarefaction andthe transition to a metal-ion dominated plasma. In the present experiments, anegative bias of 100 V is applied to the substrate, either continuously duringthe entire deposition or synchronized with the metal-rich portion of the ionflux. Two different sputtering-gas mixtures, Ar/N2 and Kr/N2, are employed inorder to probe effects associated with the noble-gas mass and ionizationpotential. The combination of x-ray diffraction, high-resolutionreciprocal-lattice maps, and high-resolution cross-sectional transmissionelectron microscopy analyses establish that all HfN films have a cube-on-cubeorientational relationship with the substrate, i.e., [001]HfN||[001]MgO and(100)HfN||(100)MgO. Layers grown with continuous substrate bias, in eitherAr/N2 or Kr/N2, exhibit a relatively high mosaicity and a high concentration oftrapped inert gas. In distinct contrast, layers grown in Kr/N2 with thesubstrate bias synchronized to the metal-ion-rich portion of HiPIMS pulses,have much lower mosaicity, no measurable inert-gas incorporation, and ahardness of 25.7 GPa, in good agreement with results for epitaxial HfN(001)layers grown at Ts = 650 C (Ts/Tm = 0.26).

Low temperature (Ts/Tm < 0.1) epitaxial growth of HfN/MgO(001) via reactive HiPIMS with metal-ion synchronized substrate bias