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This report presents a robust composite resonator known as the high overtonebulk acoustic wave resonator (HBAR) for demonstrating experimentally theability of the resonator to tune the envelope of the spectrum by applying dcbias. The reported HBAR exhibits exceptionally high-quality factor in thefrequency range of 700 MHz to 3 GHz and high effective coupling coefficientover the broad range of microwave frequencies. The HBAR is based on thinBa0.5Sr0.5TiO3 film sandwiched between two electrodes forming a transducer,supported by a thick sapphire substrate which is a low acoustic loss material.The resonator works on the principle of induced piezoelectricity due to theapplied dc bias. The minima of the envelope changes from 1.16 GHz with S11 of-3.51 dB at 100 kV/cm bias to 1.90 GHz with S11 of -42.23 dB at 700 kV/cm bias,giving a relative tunability of the envelope to be around 64%. The spacing ofthe parallel resonance frequency (SPRF) for different bias voltages are alsopresented in this report. The quality factor of the resonator is over 22,000 ataround 2GHz.

Tuning of envelope in high overtone bulk acoustic wave resonator