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Ramp-type junctions of $\rm Au-Bi_2Se_3-NbN$ were prepared on top of a bottomgate comprised of a $\rm SrTiO_3$ gate-insulator film on $\rm NbN$gate-electrode layer on (100) $\rm SrTiO_3$ wafer. Two wafers withgate-insulator thickness of 120 and 240 nm were studied, with the formershowing higher gate leakage currents Ig at high gate voltages Vg, leading toheating effects and shifting of the junctions conductance spectra versus thevoltage bias. At Vg=0 V, the conductance spectra of the low resistancejunctions showed zero bias conductance peaks inside a tunneling gap withtypical conductance drops when the critical current Ic was reached, while thehigh resistance ones exhibited tunneling conductance only. For Vg$>$-0.2 V($\rm E\simeq$ -2 MV/cm) of the wafer with 120 nm thick gate-insulator linearIg vs Vg was found, while for Vg$<$-0.2 V, Ig saturation was observed, leadingto quadratic and linear heating effects at positive and negative high Vgvalues, respectively. This led to asymmetric conductance spectra shifts versusVg which followed almost exactly the Ig vs Vg behavior. In the wafer with twicethe gate-insulator thickness (240 nm), heating effects were stronglysuppressed, and symmetric small peak shifts appeared only under the highest Vgvalues of Vg=$\pm$2 V ($\rm E\simeq \pm$ 10 MV/cm). Under Vg=2 V, a 5\% lowerconductance was observed as compared to Vg=-2 V, indicating a small Fermienergy shift in our junctions under $\pm$10 MV/cm fields.

Gating of Au-$Bi_2Se_3$-NbN ramp-type junctions with superconducting NbN gate-electrode and $SrTiO_3$ film as the gate-insulator