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We report the influence of the AlN interlayer thickness (0-15 nm) on thephotovoltaic properties of Al0.37In0.63N on Si heterojunction solar cellsdeposited by radio frequency sputtering. The poor junction band alignment andthe presence of a 2-3 nm thick amorphous layer at the interface mitigates theresponse in devices fabricated by direct deposition of n-AlInN on p-Si(111).Adding a 4-nm-thick AlN buffer layer improves the AlInN crystalline quality andthe interface alignment leading to devices with a conversion efficiency of 1.5%under 1-sun AM1.5G illumination. For thicker buffers the performance lessensdue to inefficient tunnel transport through the AlN. These results demonstratethe feasibility of using In-rich AlInN alloys deposited by radio frequencysputtering as novel electron-selective contacts to Si-heterojunction solarcells.

Influence of the AlN interlayer thickness on the photovoltaic properties of In-rich AlInN on Si heterojunctions deposited by RF sputtering