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Carbon nanostructures technology has recently emerged as a key enabler fornext-generation optoelectronic devices including deep UV detectors and lightsources which is promising in health and environment monitoring. Here, wereport the fabrication of solution processed Carbon nano-dots (CNDs)/n-Siheterojunction showing broadband spectral response with a peak responsivity of~ 1.25 A/W in UV (~300 nm) wavelength. The surface topography and chemicalinformation of synthesized CNDs via a facile synthesis route have beencharacterized showing the presence of surface chemical states resulting broadoptical emission. The CNDs/n-Si photo diodes exhibit very low dark current(~500 pA), excellent rectification ratio (~5*10^3), and very goodphoto-modulation in UV region. Given the solution-processing capability of thedevices and extraordinary optical properties of CNDs, the use of CNDs will openup unique opportunities for future high-performance, low-cost DUV photodetectors.

Solution Processed CMOS compatible Carbon Nano-dots Based Heterojunction for Enhanced UV Detector