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Controlling the interconnection of neighboring seeds (nanoflakes) to fullcoverage of the textured substrate is the main challenge for the large-scaleconformal growth of atomic-thick transition metal dichalcogenides by chemicalvapor deposition. Herein, we report on a controllable method for the conformalgrowth of monolayer MoS2 on not only planar but also micro- and nano-ruggedSiO2/Si substrates via metal-organic chemical vapor deposition. The continuityof monolayer MoS2 on the rugged surface is evidenced by scanning electronmicroscopy, cross-section high-resolution transmission electron microscopy,photoluminescence (PL) mapping, and Raman mapping. Interestingly, thephoto-responsivity (~254.5 mA/W) of as-grown MoS2 on the nano-rugged substrateexhibits 59 times higher than that of the planar sample (4.3 mA/W) under asmall applied bias of 0.1 V. This value is record high when compared with allprevious MoS2-based photocurrent generation under low or zero bias. Such alarge enhancement in the photo-responsivity arises from a large active area forlight-matter interaction and local strain for PL quenching, where the lattereffect is the key factor and unique in the conformally grown monolayer on thenano-rugged surface. The result is a step toward the batch fabrication ofmodern atomic-thick optoelectronic devices.

Large-Scale Conformal Growth of Atomic-Thick MoS2 for Highly Efficient Photocurrent Generation