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It is shown, using density matrix calculation, that high precisiontwo-dimensional (2D) atom localization in V-type system can be achieved byapplying an additional microwave coupling field between the excited states. Inthe present scheme, two lasers, probe and pump, form a V-type system bycoupling the ground state to the excited states while an additional 2D standingmicrowave field is used to couple the excited states. The solutions of thedensity matrix equations reveal that the off-diagonal density matrix element$\rho_{31}$, which signify the coherence between the states connected by theprobe laser, is position dependent. As the imaginary part of $\rho_{31}$ isproportional to the imaginary part of the susceptibility, the probe absorptionalso becomes position dependent and in this situation one can readily obtaininformation about the atom position from the probe absorption spectra. Perfect2D atom localization can be achieved by carefully selecting different systemparameters such as detuning, relative phase, dephasing and field strength. Itis found that the atom localization is highly dependent on the probe andcoupling field detuning values. In view of this, a systematic study isperformed on the system parameters and different zones have been identifiedwhich give rise to different absorption shapes, e.g. "dip", "wall", "peak" aswell as negative absorption or amplification. Probe absorption spectrum is alsofound to be dependent on relative phase between the applied fields. Thedependence of the dephasing parameter on the probe absorption is investigatedand found to be detrimental to atom localization. The effect of the microwavecoupling strength on "wall" type absorption shape is also studied and theresults are discussed. Finally, a possible practical realization of the presentscheme is discussed in Conclusion section.

2D sub-half-wavelength atom localization in a three-level V-type atomic system