English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

We studied the anharmonic modal contributions to heat transfer at theinterface of crystalline Si and amorphous SiO2 using the recently proposedinterface conductance modal analysis (ICMA) method. Our results show that ~74%of the thermal interface conductance (TIC) arises from the extended modes,which occupy more than ~58% of the entire population of vibrational modes inthe system. More interestingly, although the population of purely localized andinterfacial modes on the SiO2 side is less than 6 times the population ofpartially extended modes, the contribution to TIC by these localized modes ismore than twice that of the contribution from partially extended modes. Such anobservation, once again proves the non-negligible role of localized modes tofacilitate heat transfer across systems with broken symmetries, and reiteratesthe fact that neglecting the contribution of localized modes in any modalanalysis approach is an over-simplification of the actual mechanisms of heattransfer. Correctly pinpointing the modal contributions is of vital importance,since these values are directly utilized in determining the temperaturedependent TIC, which is crucial to silicon on insulator (SOI) technologies withmyriad applications such as microelectronics and optoelectronics.

Modal analysis of heat transfer across crystalline Si and amorphous SiO2 interface