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Spin transistors (whose on-off operation is achieved byelectric-field-controlled spin orientation 1), if realized, can revolutionizemodern electronics through the implementation of a faster and a moreenergy-efficient performance as well as non-volatile data storage 2, 3. Theoriginal proposal by Datta and Das 1 that relies on electric-field-controlledspin precession in a semiconductor channel faces significant challengesincluding inefficient spin injection, spin relaxation and spread of the spinprecession angle 4, 5. Recent demonstration of electric-field switching ofmagnetic order 6-8 and spin filtering 9-12 in two-dimensional magneticinsulator CrI3 has inspired a new operational principle for spin transistors.Here we demonstrate spin field-effect transistors based on dual-gatedgraphene/CrI3 tunnel junctions. These devices show an ambipolar transistorbehavior and tunnel magnetoresistance widely tunable by gating when the CrI3magnetic tunnel barrier undergoes an antiferromagnetic-ferromagnetic spin-fliptransition. Under a constant magnetic bias in the vicinity of the spin-fliptransition, the gate voltage can repeatedly alter the device between a high anda low conductance state with a large hysteresis. This new spin transistorconcept based on the electric-field-controlled spin-flip transition in themagnetic tunnel barrier is immune to interface imperfections and allows spininjection, control and detection in a single device.

Spin transistor built on 2D van der Waals heterostructures