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We propose a method for generating Fano resonance in a standalone siliconnanobeam cavity which eliminates the inconvenience from the unexpectedside-coupled bus waveguide and unlocks new opportunities to developultra-compact and ultra-fast electro-optical modulators.. Taking advantage froma spatial-division multiplexing principle of operation between transverseelectric modes, a sharp resonant mode and an efficient flat background mode aresimultaneously generated in the same silicon channel for the realization ofefficient Fano resonances. Unambiguous asymmetric spectrum lineshapes arethoroughly investigated using numerical and analytical methods andexperimentally demonstrated in the near infra-red around lambda=1.55{\mu}m,presenting an extinction ratio of about 17dB for a delta lambda =56 pmwavelength detuning for the 1st cavity mode (Q-factor Q=34000), and higher than23 dB extinction ratio for a delta lambda=366 pm detuning for the 2nd cavitymode (Q=5600). These extinction ratios are 10~15 dB larger than theirLorentzian counterparts exhibiting similar Q factors. Silicon Fano modulationbased on plasma dispersion effect is proposed, for which an energy consumptionas low as few fJ/bit is estimated. Fano cavity scheme addressed in this paperpresents a great potential for low power consumption silicon optical modulatorsand provides anew insight to the advantages of Fano resonances for opticalmodulation schemes.

Generating Fano Resonances in a single-waveguide nanobeam cavity for efficient electro-optical modulation