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Control of the crystalline orientation of nitrogen-vacancy (NV) defects indiamond is here demonstrated by tuning the temperature of chemical vapordeposition (CVD) growth on a (113)-oriented diamond substrate. We show thatpreferential alignment of NV defects along the [111] axis is significantlyimproved when the CVD growth temperature is decreased. This effect is thencombined with temperature-dependent incorporation of NV defects during the CVDgrowth to obtain preferential alignment over dense ensembles of NV defectsspatially localized in thin diamond layers. These results demonstrate thatgrowth temperature can be exploited as an additional degree of freedom toengineer optimized diamond samples for quantum sensing applications.

Optimizing synthetic diamond samples for quantum sensing technologies by tuning the growth temperature