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This paper presents the first multiband mm-wave linear Doherty PA in siliconfor broadband 5G applications. We introduce a new transformer-based on-chipDoherty power combiner, which can reduce the impedance transformation ratio inpower back-off (PBO) and thus improve the bandwidth and power-combiningefficiency. We also devise a "driver-PA co-design" method, which createspower-dependent uneven feeding in the Doherty PA and enhances the Dohertyoperation without any hardware overhead or bandwidth compromise. For the proofof concept, we implement a 28/37/39-GHz PA fully integrated in a standard130-nm SiGe BiCMOS process, which occupies 1.8mm2. The PA achieves a 52% -3-dBsmall-signal S21 bandwidth and a 40% -1-dB large-signal saturated output power(Psat) bandwidth. At 28/37/39GHz, the PA achieves +16.8/+17.1/+17-dBm Psat,+15.2/+15.5/+15.4-dBm P1dB, and superior 1.72/1.92/1.62 times efficiencyenhancement over class-B operation at 5.9/6/6.7-dB PBO. Moreover, the PAdemonstrates multi-Gb/s data rates with excellent efficiency and linearity for64QAM in all the three 5G bands. This PA advances the state of the art forDoherty, wideband, and 5G silicon PAs in mm-wave bands. It supports drop-inupgrade for current PAs in existing mm-wave systems and opens doors to compactsystem solutions for future multiband 5G massive MIMO and phased-arrayplatforms.

A 28/37/39GHz Multiband Linear Doherty Power Amplifier in Silicon for 5G Applications