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Effect of uncompensated Ga-V co-doping on structural phase transition, graingrowth process and optical properties of TiO2 is reported here. Inhibition ofphase transition due to co-doping is confirmed by X-ray diffractionmeasurement. Activation energy of phase transition increases from 120KJ/mol(x=0) to 140 KJ/mol (x=0.046) due to Ga-V co-doping. In anatase phase, latticeconstants increase by the effect of Ga3+ interstitials. This results ininhibition of phase transition. Anatase phase becomes stable up to ~650 C inco-doped sample whereas for pure TiO2 phase transition starts in between450-500 C. In anatase phase, strain increases due to co-doping which reducescrystallite size. In rutile phase, grain growth process is enhanced due toco-doping and particles show a rod-like structure with majority 110 facets.Bandgap decreases in both phases and reduced to a visible light region. BETanalysis shows that surface area increases from 4.55 m2/g (x=0) to 96.53 m2/g(x=0.046) by Ga-V incorporation which provide a large number of active site forphotocatalytic activity. Hence, co-doped anatase nanoparticle can be used as apromising candidate for photocatalytic applications using visible light up to ahigher temperature ~650 C.

Structural phase transition, grain growth and optical properties of uncompensated Ga-V co-doped TiO2