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Spin-orbit torque and spin-transfer torque are leading the pathway to thefuture of spintronic memories. However, both of the mechanisms are sufferingfrom intrinsic limitations. In particular, an external magnetic field isrequired for spin-orbit torque to execute deterministic switching inperpendicular magnetic tunnel junctions; the demand for reduced spin-transfertorque switching current to realize ultralow power is still remaining. Thus, amore advanced switching mechanism is urgently needed to move forwardspintronics for wide applications. Here, we experimentally demonstrate thefield-free switching of three-terminal perpendicular-anisotropy nanopillardevices through the interaction between spin-orbit and spin-transfer torques.The threshold current density of spin-transfer torque switching is reduced to0.94 MA.cm-2, which is a significant decrease compared to that in othercurrent-induced magnetization switching mechanisms. In addition, thanks to theinterplay of spin-orbit and spin-transfer torques, lower current-inducedswitching in the conventional two-terminal perpendicular magnetic tunneljunctions is also achieved.

Field-free switching of perpendicular magnetic tunnel junction by the interplay of spin orbit and spin transfer torques