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Field-effect transistors (FETs) with non-covalently functionalised molybdenumdisulfide (MoS2) channels grown by chemical vapour deposition (CVD) on SiO2 arereported. The dangling-bond-free surface of MoS2 was functionalised with aperylene bisimide derivative to allow for the deposition of Al2O3 dielectric.This allowed the fabrication of top-gated, fully-encapsulated MoS2 FETs.Furthermore, by the definition of vertical contacts on MoS2, devices, in whichthe channel area was never exposed to polymers, were fabricated. The MoS2 FETsshowed high mobilities for transistors fabricated on SiO2 with Al2O3 astop-gate dielectric. Thus, gate-stack engineering using innovative chemistry isa promising approach for the fabrication of reliable electronic devices basedon 2D materials.

Optimized single-layer MoS2 field-effect transistors by non-covalent functionalisation