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Quantum technologies require robust and photostable single photon emitters(SPEs) that can be reliably engineered. Hexagonal boron nitride (hBN) hasrecently emerged as a promising candidate host to bright and optically stableSPEs operating at room temperature. However, the emission wavelength of thefluorescent defects in hBN has, to date, been shown to be uncontrolled. Theemitters usually display a large spread of zero phonon line (ZPL) energiesspanning over a broad spectral range (hundreds of nanometers), which hindersthe potential development of hBN-based devices and applications. We demonstratebottom-up, chemical vapor deposition growth of large-area, few layer hBN thathosts large quantities of SPEs: 100 per 10x10 {\mu}m2. Remarkably, more than 85percent of the emitters have a ZPL at (580{\pm}10)nm, a distribution which isover an order of magnitude narrower than previously reported. Exploiting thehigh density and uniformity of the emitters, we demonstrate electricalmodulation and tuning of the ZPL emission wavelength by up to 15 nm. Ourresults constitute a definite advancement towards the practical deployment ofhBN single photon emitters in scalable quantum photonic and hybridoptoelectronic devices based on 2D materials.

Bottom up engineering of near-identical quantum emitters in atomically thin materials